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Titlebook: Stochastic Process Variation in Deep-Submicron CMOS; Circuits and Algorit Amir Zjajo Book 2014 Springer Science+Business Media Dordrecht 20

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發(fā)表于 2025-3-21 19:00:29 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書(shū)目名稱(chēng)Stochastic Process Variation in Deep-Submicron CMOS
副標(biāo)題Circuits and Algorit
編輯Amir Zjajo
視頻videohttp://file.papertrans.cn/879/878095/878095.mp4
概述Unique combination of mathematical treatment of random process variation, electrical noise and temperature and necessary circuit realizations for on-chip monitoring (probably only on the market).Numer
叢書(shū)名稱(chēng)Springer Series in Advanced Microelectronics
圖書(shū)封面Titlebook: Stochastic Process Variation in Deep-Submicron CMOS; Circuits and Algorit Amir Zjajo Book 2014 Springer Science+Business Media Dordrecht 20
描述.One of the most notable features of nanometer scale CMOS technology is the increasing magnitude of variability of the key device parameters affecting performance of integrated circuits. The growth of variability can be attributed to multiple factors, including the difficulty of manufacturing control, the emergence of new systematic variation-generating mechanisms, and most importantly, the increase in atomic-scale randomness, where device operation must be described as a .stochastic. process. In addition to .wide-sense stationary stochastic. device variability and temperature variation, existence of .non-stationary stochastic. electrical noise associated with fundamental processes in integrated-circuit devices represents an elementary limit on the performance of electronic circuits..In an attempt to address these issues, .Stochastic Process Variation in Deep-Submicron CMOS: Circuits and Algorithms. offers unique combination of mathematical treatment of random process variation, electrical noise and temperature and necessary circuit realizations for on-chip monitoring and performance calibration. The associated problems are addressed at various abstraction levels, i.e. circuit leve
出版日期Book 2014
關(guān)鍵詞Deep-submicron CMOS; Dynamic Thermal Methodology; Electrothermal Couplings; High Performance MPSoC; Low
版次1
doihttps://doi.org/10.1007/978-94-007-7781-1
isbn_softcover978-94-024-0285-8
isbn_ebook978-94-007-7781-1Series ISSN 1437-0387 Series E-ISSN 2197-6643
issn_series 1437-0387
copyrightSpringer Science+Business Media Dordrecht 2014
The information of publication is updating

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發(fā)表于 2025-3-21 20:26:46 | 只看該作者
Conclusions and Recommendations,ystal is random, the final number and location of atoms in the channel of each transistor is a random variable. As the threshold voltage of the transistor is determined by the number and placement of dopant atoms, it will exhibit a significant variation, which leads to variation in the transistors’
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發(fā)表于 2025-3-22 03:22:55 | 只看該作者
Book 2014 Algorithms. offers unique combination of mathematical treatment of random process variation, electrical noise and temperature and necessary circuit realizations for on-chip monitoring and performance calibration. The associated problems are addressed at various abstraction levels, i.e. circuit leve
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Amir Zjajotanding of its characteristics. Present uses showcase its relevance today, while the discussion of temporal postponement sheds light on setbacks faced. The chapter ends by drawing insightful conclusions, emphasizing the promising trajectory of hydrogen peroxide. This comprehensive exploration serves
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發(fā)表于 2025-3-23 04:24:22 | 只看該作者
Amir Zjajoestigation of metal oxides, NTO metal, azoles, and graphene-modified azoles as green combustion catalysts offers great potential for advancements in combustion control and environmental sustainability. These catalysts could contribute significantly to the development of more efficient combustion tec
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發(fā)表于 2025-3-23 08:47:42 | 只看該作者
Amir Zjajo check and examine patients’ clinical data, and prescribe medicines and tests. After 2 years of operation, a survey was conducted to understand the impact of using this mode of healthcare delivery. The chapter summarizes people’s perceptions and views in the second part of the chapter for further im
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