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Titlebook: Size Effects in Nanostructures; Basics and Applicati Victor Kuncser,Lucica Miu Book 2014 Springer-Verlag Berlin Heidelberg 2014 Functional

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樓主: Truman
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發(fā)表于 2025-3-25 05:43:40 | 只看該作者
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發(fā)表于 2025-3-25 09:09:25 | 只看該作者
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發(fā)表于 2025-3-25 14:44:10 | 只看該作者
Size Effects in Nanostructures978-3-662-44479-5Series ISSN 0933-033X Series E-ISSN 2196-2812
24#
發(fā)表于 2025-3-25 18:49:52 | 只看該作者
0933-033X menon-property-material-applications.Introduces specific pheThe influence of size effects on the properties of nanostructures is subject of this book. Size and interfacial effects in oxides, semiconductors, magnetic and superconducting nanostructures, from very simple to very complex, are considered
25#
發(fā)表于 2025-3-25 20:34:46 | 只看該作者
Self-organization and Size Effects in Amorphous Silicontal values. In order to show the importance of the interfaces between different a-Si clusters, two networks of 200 and 205 atoms were modelled separately and then linked using an amorphous and a crystalline interface. Also the voids in the a-Si clusters are investigated.
26#
發(fā)表于 2025-3-26 01:32:22 | 只看該作者
Book 2014explained for various nanostructures. The specific applications are discussed with respect to size-related properties. A logic implication of type phenomenon-property-material-application is envisaged throughout this work.
27#
發(fā)表于 2025-3-26 06:51:32 | 只看該作者
Oxide Thin Films and Nano-heterostructures for Microelectronics (MOS Structures, Ferroelectric Materpecial emphasis on size effects, interface quality and the opportunity to control the emergent phenomena in Metal-Oxide-Semiconductor (MOS) and Metal-Ferroelectric-Semiconductor (MFS) materials systems.
28#
發(fā)表于 2025-3-26 11:08:34 | 只看該作者
29#
發(fā)表于 2025-3-26 14:58:12 | 只看該作者
Self-organization and Size Effects in Amorphous Siliconthe disorder in silicon is treated by the free energy balance in nanometric clusters using valence force field theory. The computed structural and energetical parameters of three continuous random network (CRN) models of amorphous silicon with 2,052, 156 and 155 atoms are compared with the experimen
30#
發(fā)表于 2025-3-26 19:08:26 | 只看該作者
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