Titlebook: Simulation of Semiconductor Processes and Devices 2001; SISPAD 01 Dimitris Tsoukalas,Christos Tsamis Conference proceedings 2001 Springer-V

cessation

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書(shū)目名稱(chēng)Simulation of Semiconductor Processes and Devices 2001被引頻次




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書(shū)目名稱(chēng)Simulation of Semiconductor Processes and Devices 2001讀者反饋




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arrhythmic

A Unified Model of Dopant Diffusion in SiGe.,The understanding of the effect of each physical mechanism driving dopant and point defect diffusion due to Ge leads to a unified formulation of diffusion for the usual dopants in SiGe material. The model calibration is deduced from a critical synthesis of the theoretical and experimental published studies.

transplantation

Dynamics of p+ polysilicon gate depletion due to the formation of boron compounds in TiSi2,In dual workfunction gate technologies it can be observed, that p. poly gates of pMOSFETs tend to lose boron doping. This work presents a model for the transport of Si and B in the TiSi./polysilicon bilayer system that can explain the saturation of the B dose loss.

十字架

Quantum Corrections in 3-D Drift Diffusion Simulations of Decanano MOSFETs Using an Effective PotenAs MOSFET devices are aggressively scaled into the deep submicron regime quantum mechanical effects become increasingly important. We compare the recently proposed effective potential formalism with the density gradient approach for first order quantum simulations of sub 0.1μm MOSFETs within a modified drift diffusion framework.

過(guò)濾

脖子

連累

凝結(jié)劑

Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon,ribes the thermal evolution of a supersaturation of Si interstitial atoms in dynamical equilibrium with all types of extrinsic defects. We show some successful applications of our model to a variety of experimental conditions and give an example of its predictive capabilities at ultra low implantion energies.

BADGE

conceal

A Simple Modeling and Simulation of Complete Suppression of Boron Out-Diffusion in Si1-xGex by Carbiffusion of boron is strongly suppressed by a moderate concentration of substitutional C in Si._.Ge.. This suppression is due to an under saturation of Si selfinterstitials in the C-rich region. The results obtained from the proposed model are in good agreement with the measured values.