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Titlebook: Silicon Light-Emitting Diodes and Lasers; Photon Breeding Devi Motoichi Ohtsu Book 2016 Springer International Publishing Switzerland 2016

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21#
發(fā)表于 2025-3-25 07:24:28 | 只看該作者
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發(fā)表于 2025-3-25 08:10:13 | 只看該作者
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發(fā)表于 2025-3-25 11:55:23 | 只看該作者
2192-1970 f dressed photons and dressed phonons.Covers a wide range ofThis book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed phot
24#
發(fā)表于 2025-3-25 17:42:57 | 只看該作者
Problems with Light Emitting Devices and Their Solutions,le with conventional methods employed in materials science and technology. First, this chapter surveys the problems to be solved. Some strategies and principles achieve solutions are reviewed. Detailed discussions of the theoretical aspects are described in Appendices A–E.
25#
發(fā)表于 2025-3-25 23:25:35 | 只看該作者
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發(fā)表于 2025-3-26 03:51:20 | 只看該作者
Light Emitting Diodes Fabricated Using Other Crystals, semiconductors, as is the case of Si. The second one is zinc oxide (zinc oxide). Although it is a direct transition-type semiconductor, it has been difficult to form a p-type crystal in this material for highly efficient LEDs by conventional technologies.
27#
發(fā)表于 2025-3-26 05:50:32 | 只看該作者
28#
發(fā)表于 2025-3-26 08:39:29 | 只看該作者
29#
發(fā)表于 2025-3-26 15:15:01 | 只看該作者
Infrared Lasers Using Silicon Crystal,devices that have been experimentally demonstrated, devices having an ultralow threshold current density are reviewed. In addition, the values of optical amplification quantities are estimated accurately for achieving further improvements in lasing performance. Finally, novel devices that emit high output optical power are demonstrated.
30#
發(fā)表于 2025-3-26 19:58:50 | 只看該作者
Light Emitting Diodes Fabricated Using Other Crystals, semiconductors, as is the case of Si. The second one is zinc oxide (zinc oxide). Although it is a direct transition-type semiconductor, it has been difficult to form a p-type crystal in this material for highly efficient LEDs by conventional technologies.
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