Titlebook: Semiconductor Power Devices; Physics, Characteris Josef Lutz,Heinrich Schlangenotto,Rik De Doncker Book 20111st edition Springer-Verlag Ber

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Semiconductor Properties, wide range, about 10.?10. Ω cm, between that of metals and insulators and which at high temperatures decreases with increasing temperature. Other characteristics are light sensitivity, rectifying effects, and an extreme dependency of the properties on impurities. After reaching a basic understandin

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Schottky Diodes, blocking voltages, the resistance of the base will increase strongly due to the lack of charge carrier modulation, as will be shown in the following. Schottky power diodes have been used for a long time, but in the last years they have gained an increased importance in the medium power range:

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Bipolar Transistors, germanium block as base [Bar49, Sho49]. Soon it was clear that the metal semiconductor junctions at the point contacts can be replaced by two closely coupled pn-junctions. The first paper on a bipolar transistor of silicon with diffused emitter and base was published in 1956 [Tan56]. For a bipolar

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