Titlebook: Semi-Insulating III–V Materials; Nottingham 1980 G. J. Rees Book 1980 The individual contributors 1980 alloy.defects.electronic properties.

改進

Large Diameter, Undoped Semi-Insulating GaAs for High Mobility Direct Ion Implanted FET Technologyy LEC/PBN crucible techniques. Direct implant FET channels with 1–1.5 × 10. cm. peak donor concentrations exhibit channel mobilities of 4800 to 5000 cm. V. s. in undoped, semi-insulating GaAs substrates, compared with mobilities ranging from 3700 to 4500 cm. V. s. for various Cr-doped GaAs substrate

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Growth and Characterization of Semi-Insulating GaAs for Use in Ion Implantationn effects resulting from thermal annealing with Si.N. capping layers are assessed by analysis with secondary ion mass spectroscopy (SIMS). Conclusions drawn from qualification tests, electrical transport and mass spectrographs measurements are correlated with the specific materials growth method use

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Book 1980val of the author in the interests of rapid publication. The Editor wishes to thank the referees for their ready advice at all stages, Paul Jay who helped with many of the editorial duties and Muriel Howes and Lorraine Jones for rapid and accurate typing.

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stressors

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傾聽

978-1-4684-9195-1The individual contributors 1980

Mets552

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