Titlebook: Science and Technology of Thin Film Superconductors 2; Robert D. McConnell,Rommel Noufi Book 1990 Springer Science+Business Media New York

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Factors Affecting Formation of ‘in Situ’ and 110 K Phase Sputtered Bi-Based Superconducting Thin Fil ensure proper mixing and thus enhance the formation of 110 K phase. The melting point of the Bi-based materials seems to depend on the ambient gas, composition and the degree of prior chemical reaction. Thus the films deposited at substrate temperatures above 450° C melts in oxygen at ~890° C in ox

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In-Situ Growth of Superconducting Films of Bi-Sr-Ca-Cu-O Using Magnetron Sputterings have a smaller energy barrier to overcome in forming a crystal structure. There is a narrow temperature window for growth of the superconducting phase; at lower temperatures the films tend to be semiconducting, due probably to lack of sufficient thermal energy to crystallize a well-ordered phase.

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High Tc YBa2Cu3O7?x and TlmCanBa2Cun+1Ox Thin Films by Sputter Deposition from Stoicthiometric Oxideential toward the substrate, causing the preferential resputtering effect observed in the conventional parallel plate sputtering configuration. The compositions of the YBa.Cu.O. and Tl.Ca.Ba.Cu.O. films sputter-deposited using the off centered and the facing target configurations are almost identica

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