Titlebook: Robust SRAM Designs and Analysis; Jawar Singh,Saraju P. Mohanty,Dhiraj K. Pradhan Book 2013 Springer Science+Business Media New York 2013

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Design Metrics of SRAM Bitcell,ent static and dynamic stability metrics are investigated. Static stability metrics includes conventional butterfly curves obtained from the voltage transfer characteristics, the N-curve based metrics and their simulation setup for read and write stability are also discussed. The static stability me

帶傷害

Single-Ended SRAM Bitcell Design, its word-oriented array organization, suitable for low-V. and low-power embedded systems is presented. The SE-SRAM has a strong 2. 65 × worst-case read Static Noise Margin (SNM) compared to a standard 6T bitcell and equivalent to an 8T bitcell from existing literature. The previously proposed singl

不利

2-Port SRAM Bitcell Design,plications realized using System-on-Chip (SoC) technology. Hence, simultaneous or parallel read/write (R/W) access multi-port SRAM bitcells are widely employed in such embedded systems to enhance the memory bandwidth. In this chapter, multi-port SRAM bitcells are studied and their merits and de-meri

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SRAM Bitcell Design Using Unidirectional Devices,d. It is also demonstrated that a functional 6T TFET SRAM design with comparable stability margins and faster performances at low voltages can be realized using unidirectional TFETs devices when compared with the 7T TFET SRAM bitcell.

ENACT

NBTI and Its Effect on SRAM,sed cache configurations. It is also found that the low V. transistors age faster than the high V. transistors due to NBTI. Hence, NBTI effect is more pronounced in future technologies due to reduction in V. with technology scaling. Also NBTI effect is more significant at higher temperature.