Titlebook: Research on the Radiation Effects and Compact Model of SiGe HBT; Yabin Sun Book 2018 Springer Nature Singapore Pte Ltd. 2018 SiGe HBT.Radi

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Parameter Extraction of SiGe HBTs,The extracted results using the numerical optimization strongly depends on the initial value and the the selection of simulation tool. Direct analytical extraction method is generally based on the frequency response

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Yabin SunNominated as an outstanding PhD dissertation by Tsinghua University, China.Proposes a new technique for detecting displacement damage in silicon-germanium (SiGe) heterojunction bipolar transistors (HB

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Displacement Effects in SiGe HBT,ch has become an important issue in the study of radiation effects. In the past few years, as the traditional radiation source, neutrons have been always used to characterize the displacement damage effects in devices and circuit systems.

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Benjamin Rix Brooks M.D.,Robert L. Hirsch Ph.D.,Patricia K. Coyle M.D.erseits wird die Selbstverst?ndlichkeit von Werten und Normen — die Kultur -der Einheimischen pl?tzlich in Frage gestellt, ihre sozialen Produktionsfunktionen bedroht, Konkurrenz entsteht. Andererseits müssen die Zuwanderer neue Handlungsstrategien entwerfen, die es ihnen erlauben, sich in der Aufna