Titlebook: Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnec; Jie Cheng Book 2018 Springer Nature

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Material Removal Mechanism of Cu in KIO4-Based Slurry, proposed based on the chemical-mechanical synergism theory. The results show that the Cu surface films formed in the slurry are complex and vary considerably as a function of the solution pH. Based on the surface film analysis and CMP experimental results, it can be concluded that the controlling f

mechanical

Material Removal Mechanism of Ru in KIO4-Based Slurry, be divided into two parts: the direct dissolution of Ru and the passivation of the surface. The surface chemistry, corrosion and passivation properties of Ru were investigated. On the basis, the CMP and CMP-electrochemical experiments were conducted to fully investigate the underlying mechanism of

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Galvanic Corrosion Inhibitors for Cu/Ru Couple During Chemical Mechanical Polishing of Ru,the oxidant in the polishing slurry. This chapter focuses on the investigation of galvanic corrosion inhibitors (BTA and 1, 2, 4-triazole) for Cu/Ru couple in the KIO.-based solutions. The galvanic corrosion current of Cu was directly measured, and the corrosion inhibition efficiencies (.) were calc

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cumulative

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