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Titlebook: Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnec; Jie Cheng Book 2018 Springer Nature

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發(fā)表于 2025-3-21 19:38:53 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書(shū)目名稱(chēng)Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnec
編輯Jie Cheng
視頻videohttp://file.papertrans.cn/829/828022/828022.mp4
概述Nominated by Tsinghua University as an outstanding thesis in the field.Includes a detailed experimental analysis of the surface characterization of Cu interconnects.Presents advanced experimental meth
叢書(shū)名稱(chēng)Springer Theses
圖書(shū)封面Titlebook: Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnec; Jie Cheng Book 2018 Springer Nature
描述.This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO.4.-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research..
出版日期Book 2018
關(guān)鍵詞Chemical mechanical polishing; Novel barrier layer material; Tribocorrosion properties; Cu/Ru galvanic
版次1
doihttps://doi.org/10.1007/978-981-10-6165-3
isbn_softcover978-981-13-5585-1
isbn_ebook978-981-10-6165-3Series ISSN 2190-5053 Series E-ISSN 2190-5061
issn_series 2190-5053
copyrightSpringer Nature Singapore Pte Ltd. 2018
The information of publication is updating

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書(shū)目名稱(chēng)Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnec網(wǎng)絡(luò)公開(kāi)度




書(shū)目名稱(chēng)Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnec網(wǎng)絡(luò)公開(kāi)度學(xué)科排名




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Conclusions and Recommendations,The thesis presents a systematic research work of the chemical mechanical polishing (CMP) of Ru as a novel diffusion barrier layer for sub-14?nm technology node of the integrated circuit.
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Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnec978-981-10-6165-3Series ISSN 2190-5053 Series E-ISSN 2190-5061
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發(fā)表于 2025-3-22 18:52:07 | 只看該作者
Introduction,Cu interconnects. It introduces the current situation of sub-14?nm technology node, the CMP technology, and the polishing of Ru as barrier layer material. The difficulties and challenges of Ru CMP are proposed based on the aforementioned discussion. The main research methods and experimental results of the thesis are shown in the last part.
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發(fā)表于 2025-3-22 23:25:12 | 只看該作者
Synergetic Effect of Potassium Molybdate and Benzotriazole on the CMP of Ru and Cu in KIO4-Based Slof the material removal rate of Cu to Ru can be evidently improved in the presence of BTA and K.MoO.. The increase of oxidizer content and the reduction of polishing down force could help to further decrease the material removal rate selectivity between Cu and Ru.
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2190-5053 corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research..978-981-13-5585-1978-981-10-6165-3Series ISSN 2190-5053 Series E-ISSN 2190-5061
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