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Titlebook: Reflections on 21st Century Human Habitats in India; Felicitation Volume Mahabir S. Jaglan,Rajeshwari Book 2021 Springer Nature Singapore

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樓主: foresight
31#
發(fā)表于 2025-3-26 22:38:56 | 只看該作者
32#
發(fā)表于 2025-3-27 04:50:02 | 只看該作者
Abdul Shaban,Sanjukta Sattaronsiderations. Also the desensitizing of the residual from the noise, the disturbances, and the model errors while maximizing fault sensitivity is the goal of the robust design of the detection and diagnosis algorithms.?Fault detection is followed by the fault isolation procedure which intends to di
33#
發(fā)表于 2025-3-27 07:58:11 | 只看該作者
Babu S. Sutheeshnacriminate between those two types of faults. This chapter presents a common bond graph model-based framework for the hybrid system modelling, simulation, residual and threshold equations derivation, and parametric and discrete mode fault detection and isolation. To improve the fault detection and is
34#
發(fā)表于 2025-3-27 12:01:57 | 只看該作者
Sarfaraz Alam,Satya Prakash,Harsh Jaiswalcriminate between those two types of faults. This chapter presents a common bond graph model-based framework for the hybrid system modelling, simulation, residual and threshold equations derivation, and parametric and discrete mode fault detection and isolation. To improve the fault detection and is
35#
發(fā)表于 2025-3-27 14:28:31 | 只看該作者
ystem that is capable of detecting, isolating, identifying or classifying faults in the system withouttheinvolvementandinterventionofoperators.Towardthisend,theprinciple goal here is to improve the ef?ciency, accuracy, and reliability of the trend analysis and diagnostics techniques through utilizat
36#
發(fā)表于 2025-3-27 19:06:31 | 只看該作者
Nidhi Sadana Sabharwals are likely induced by SEUs in the configuration memory. No destructive latch-up has been observed. During irradiation, supply current has been observed to increase almost linearly with ion fluence, probably due to progressive SEU-induced driver contentions. The configuration memory cross section h
37#
發(fā)表于 2025-3-28 00:27:04 | 只看該作者
Anindita Sarkars are likely induced by SEUs in the configuration memory. No destructive latch-up has been observed. During irradiation, supply current has been observed to increase almost linearly with ion fluence, probably due to progressive SEU-induced driver contentions. The configuration memory cross section h
38#
發(fā)表于 2025-3-28 04:32:29 | 只看該作者
39#
發(fā)表于 2025-3-28 10:03:30 | 只看該作者
40#
發(fā)表于 2025-3-28 11:03:43 | 只看該作者
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