Titlebook: Recent Advances in Technology Research and Education; Selected Papers of t Yukinori Ono,Jun Kondoh Conference proceedings 2024 The Editor(s

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Properties of Vacuum-Evaporated Metal Halide Perovskite Absorbers on Planar and Nanotextured SiliconI.Cl. perovskite layers were deposited on planar Si and glass substrates and nanotextured Si substrates by vacuum co-evaporation and sequential evaporation methods. Methylammonium chloride (CH.NH.Cl) and lead iodide (PbI.) were used as the raw precursors. Nanotexturing of the Si substrates was carri

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Spin Relaxation in GaAs/AlGaAs Coupled Quantum Wellsnts. A coupled quantum well (CQW) with a structure in which two quantum wells with a width of 10?nm and 15?nm are separated by 11?nm barrier layers were used to separate electrons and holes spatially. We found that the spin relaxation time was longer in CQW compared to that of isolated well. This wa

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Study of the Phase Changes in ZnS-Based Phosphors Crystal Structure Impact on Their Radioluminescentposition and structure. Particle surface and size and phase composition of phosphors are significantly affected either by treatment of the initial batches with high-energy electron flow and nitrogen plasma or by changes in atmosphere of synthesis. The correlations between phosphors phase content and

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Study of ,-, Junctions Created by Laser Implantation of In in Semi-Insulating ,-CdTe:ClIn into the surface region of high-resistivity detector-grade .-CdTe:Cl crystals. The .-. characteristics and spectral photosensitivity measured in the photovoltaic mode of the formed structures are discussed. The conversion of the conductivity type of a thin surface layer in .-CdTe:Cl and formation

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Spectroscopic Studies of High Performance CdTe-Based Schottky Diode X/γ-Ray Sensors00?V) and high energy resolution (~1.0%@662?keV). We present and analyze the dependencies of the .Cs isotope energy spectra on the applied bias, the distance between the sensor and the radiation source, and the operation time. Despite the small (1?mm) CdTe crystal thickness, resulting in low radiati

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Comparative Evaluation of Electrical Properties of Carbon Nanotube Networks Deposited on CMOS-Compatundles deposited by inkjet-printing was measured by KFM (Kelvin probe force microscopy) using Pt-coated Si tips in ultra-high vacuum (~10.?Pa). By comparing these results with electrical characteristics, SEM (scanning electron microscopy) and AFM (atomic force microscopy) measurements, we confirmed

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