Titlebook: Rare Earth Oxide Thin Films; Growth, Characteriza Marco Fanciulli,Giovanna Scarel Book 2007 Springer-Verlag Berlin Heidelberg 2007 Depositi

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Sylvie Schamm,Giovanna Scarel,Marco Fanciullithe atmospheric processes responsible for snow formation; transformation of snow to ice and changes in their properties; classification of ice and glaciers and their worldwide distribution; glaciation and ice ages; glacier dynamics; glacier surface and subsurface characteristics; geomorphic processe

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Atomic Layer Deposition of Rare Earth Oxides,e 1.2–1.3 and 0.23? cycle., respectively. Furthermore, the resulting REO films from the organometallics and nitrogen-coordinated precursors have lower carbon and hydrogen impurity levels and good electrical characteristics. However, poor thermal stability of the novel carbon- or nitrogen-coordinated

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Molecular Beam Epitaxy of Rare-Earth Oxides, the interface and film formation during epitaxial growth of Nd.O. on silicon. Based on that understanding, the whole growth procedure had to be adapted accordingly. In particular, the partial oxygen pressure during the interface formation and during growth is a?very critical parameter. Layers grown

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Film and Interface Layer Compositionof Rare Earth (Lu, Yb) Oxides Depositedby ALD,hin (≤ 5nm) Lu and Yb oxide films on Si appear to consist of a hydroxide on top and of a silicate layer, ~ 1–3?nm in thickness, at the interface with the Si substrate, the stack is converted into amorphous silicates upon post-deposition annealing in N2 and appears further stable on Si at least up to

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