Titlebook: Radio-Frequency Microelectronic Circuits for Telecommunication Applications; Yannis E. Papananos Book 1999 Springer-Verlag US 1999 CMOS.co

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The MOS Transistor at High Frequencies,f each stage. Evidently, this practice dramatically increases the system cost but it is a one way solution in many cases. However, at the low end of the frequency band (800 to 2400 MHz), it is now feasible to implement the complete system using Si-based technologies. This fact, drastically reduces t

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Integrated Passive Elements and Their Usage at High Frequencies,tors, capacitors, resistors). For example, the existence of high quality capacitors and inductors significantly determines the circuit performance and usually their shortage in an IC technology prevents the design of high frequency systems. Capacitors and ohmic resistors are elements that can be eas

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Basic Definitions and Terminology,On the other hand, the microwave telecom system designers are using different methodology and tools (i.e. Smith chart), that help them proceed with their designs in an effective and proper way. The RF IC designer (especially if he comes from the low-frequency integrated circuit design field), must b

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Mixers,nals at its inputs (it does not add them linearly) but it multiplies them in pairs. Performing the task of driving the desired signal to the . stage, out of a host of possible combinations of signals appearing at the antenna, is largely a matter of proper system design.

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Integrated RF Filters,r circuits in the system, as will be shown later on. The main reasons that keep certain filters out of the chip include the high frequency of operation, the high required quality factor and the stringent specifications in terms of dynamic range and power dissipation. In Fig. 8.1, the receiver part of a super-heterodyne system is shown.

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The Bipolar Transistor at High Frequencies,communications receiver, is the RF front-end. Additionally, it is the part of the system that exhibits the highest power consumption. For this purpose, the selection of the proper technology for the integration of this particular subsystem plays a very important role. Among silicon processes, the bipolar technologies are the preferred ones.