Titlebook: Radio Recombination Lines; Proceedings of a Wor P. A. Shaver Conference proceedings 1980 D. Reidel Publishing Company, Dordrecht, Holland 1

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mance by increasing F. or lower power by lowering V. during favorable operating conditions. Since most systems usually operate at nominal conditions where worst-case scenarios rarely occur, these infrequent dynamic variations severely limit the performance and energy efficiency of conventional micro

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T. Paulsl the damage, the plasma-induced defects in Si surface layer should be quantitatively estimated, and then, plasma designs should be optimized. Defect generation probability was proposed from an optical analysis as a measure of the damage [7], on one hand. With regard to plasma design, on the other,

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0067-0057 ld and discuss these questions of interpretation. A broad concensus has emerged: the subtleties of the line-formation process are understood, and the conditions978-94-009-9026-5978-94-009-9024-1Series ISSN 0067-0057 Series E-ISSN 2214-7985

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Nino Panagia.Emerging Technological Risk. bridges contributions from many disciplines in order to sustain a fruitful debate. .Emerging Technological Risk. is one of a series of books developed by the Dependability Interdis978-1-4471-5993-3978-1-4471-2143-5

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