Titlebook: Radiation Effects in Advanced Semiconductor Materials and Devices; Cor Claeys,Eddy Simoen Book 2002 Springer-Verlag Berlin Heidelberg 2002

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BRAWL

GUEER

Displacement Damage in Group IV Semiconductor Materials,x the percentage fraction). As shown in Chap. 2, a high energetic particle or ion may loose part of its energy by interaction with the nuclei of the target material. This initially results in the creation of vacancy-interstitial pairs, of which only a small fraction escapes direct recombination. The

得罪人

Radiation Damage in GaAs, In addition, the high electron mobility in GaAs (order 7000 cm./Vs [1]) makes the material perfectly suitable for the development of high-speed microwave circuits. How-ever, there is more and more competition of SiGe-based and scaled deep submicron Si microelectronics, which dominate the low-power

Enteropathic

Space Radiation Aspects of Silicon Bipolar Technologies,or) circuits because of their current-drive capability, linearity, low noise and excellent matching characteristics. Furthermore, their microwave performance compares favorably with respect to CMOS, explaining the use in GHz telecommunications applications and low-cost system-on-chip (SOC) solutions

樂章

follicular-unit

GaAs Based Field Effect Transistors for Radiation-Hard Applications,ave applications. The superior operation frequency combined with low high-frequency noise and power dissipation has been exploited for the development of satellite and other telecommunications systems. In this respect, the extreme radiation hardness quoted for these materials is an invaluable plus p

pacific

cleaver

,Advanced Semiconductor Materials and Devices—Outlook,s. However, the radiation community also watches the trend in the microelectronics world very carefully. Therefore, new materials and device structures are already in an early phase also studied from a viewpoint of their performance in a radiation envi ronment. This chapter aims at briefly addressin

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