Titlebook: Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors; From Materials to De Sourav Adhikary,Subhananda Chakrabarti Book 2018

只看該作者 · 發(fā)表于 2025-3-23 17:10:37

Summary and Future Work,served is the stability of PL peak of multilayer structure even after high temperature annealing. Then we have moved from materials to devices. We have used both InAs/GaAs and In(Ga)As/GaAs QD in the active layer of the multilayer heterostuctures. Improvement in device characteristics was also observed for the samples with ex-situ annealing.

只看該作者 · 發(fā)表于 2025-3-23 19:00:11

只看該作者 · 發(fā)表于 2025-3-23 23:10:35

只看該作者 · 發(fā)表于 2025-3-24 02:29:19

只看該作者 · 發(fā)表于 2025-3-24 08:12:14

https://doi.org/10.1007/978-981-10-5290-3Photodetector; Quaternary capped; Detectivity in quantum dots; Annealing in quantum dots; Epitaxy in qua

只看該作者 · 發(fā)表于 2025-3-24 13:45:01

只看該作者 · 發(fā)表于 2025-3-24 15:45:54

只看該作者 · 發(fā)表于 2025-3-24 19:31:21

Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared PhotodetectorsFrom Materials to De

只看該作者 · 發(fā)表于 2025-3-25 01:21:33

		自動登錄	找回密碼
密碼			To register

關(guān)于派博傳思			派博傳思旗下網(wǎng)站			友情鏈接
派博傳思介紹	公司地理位置	論文服務(wù)流程	影響因子官網(wǎng)	吾愛論文網(wǎng)	大講堂	北京大學(xué)	Oxford Uni.	Harvard Uni.
發(fā)展歷史沿革	期刊點(diǎn)評	投稿經(jīng)驗(yàn)總結(jié)	SCIENCEGARD	IMPACTFACTOR	派博系數(shù)	清華大學(xué)	Yale Uni.	Stanford Uni.
\|Archiver\|手機(jī)版\|小黑屋\| 派博傳思國際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-6 13:58
Copyright © 2001-2015 派博傳思京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved