Titlebook: Quantum Well Intersubband Transition Physics and Devices; H. C. Liu,B. F. Levine,J. Y. Andersson Book 1994 Springer Science+Business Media

廣大

GaAs/AlGaAs QWIPs vs HgCdTe Photodiodes for LWIR ApplicationslGaAs QWTPs operated in temperature range 40–77 K. Only at temperature 40 K, QWIPs with cutoff wavelength about 8 μm indicate higher detectivity. Advantage of QWIPs increases in wider spectral region in lower temperatures — below 40 K..Usually, in temperature range below 50 K the performance of the

潰爛

The Physics of Emission-Recombination in Multiquantum Well Structuresand Photoconductive gain measurements for different QW thicknesses, barrier widths and applied electric fields. These studies show that those QWs behave as giant two-dimensional traps for which capture rates and emission probabilities are determined. Those measurements explain very satisfactorily th

砍伐

insolence

A three-color voltage tunable quantum well intersubband photodetector for long wavelength infrared characteristics is carried out, including dark current, responsivity, and detectivity. An equivalent circuit model is used in understanding the observed behavior. The basic principle of operation can be used to produce detectors with many response colors.

鋼筆尖

蓋他為秘密

分期付款

A Novel Transport Mechanism for Photovoltaic Quantum well Intersubband Infrared Detectors electric fields across the barrier regions. The photovoltage arises from a rectification of the photoexcited carrier transport in the barrier regions. The effect is demonstrated experimentally using GaAs/AlAs/AlGaAs double-barrier QW structures operating in the 3–5 .m regime. We discuss theoretical

自制

Intersubband Stark-Ladder Transitions in Miniband-Transport Quantum-Well Infrared Detectors barrier layers. We show that a theoretical model of the quantum-well/superlattice-barrier system in an electric field accurately predicts features observed in the photocurrent spectra such as a field-induced blue-shift of the main low-field transition and the development of intersubband Stark-ladde

招待

gruelling

Intersubband Absorption in N - type Si and Ge Quantum Wellsabsorption was observed in the conduction bands of Si and Ge quantum wells on Si (110) and Si (001) substrates, respectively, grown by a Si molecular beam epitaxy (MBE) system. Normal incidence electron transitions are allowed due to the coupling of normally incident light and the off-diagonal terms