| 書目名稱 | Polycrystalline Silicon for Integrated Circuits and Displays | | 編輯 | Ted Kamins | | 視頻video | http://file.papertrans.cn/752/751081/751081.mp4 | | 圖書封面 |  | | 描述 | .Polycrystalline Silicon for Integrated Circuits andDisplays, Second. .Edition. presents much of the availableknowledge about polysilicon. It represents an effort to interrelatethe deposition, properties, and applications of polysilicon. Byproperly understanding the properties of polycrystalline silicon andtheir relation to the deposition conditions, polysilicon can bedesigned to ensure optimum device and integrated-circuit performance..Polycrystalline silicon has played an important role inintegrated-circuit technology for two decades. It was first used inself-aligned, silicon-gate, MOS ICs to reduce capacitance and improvecircuit speed. In addition to this dominant use, polysilicon is nowalso included in virtually all modern bipolar ICs, where it improvesthe basic physics of device operation. The compatibility ofpolycrystalline silicon with subsequent high-temperature processingallows its efficient integration into advanced IC processes. Thiscompatibility also permits polysilicon to be used early in thefabrication process for trench isolation and dynamicrandom-access-memory (DRAM) storage capacitors. .In addition to its integrated-circuit applications, polysilicon isbecoming vita | | 出版日期 | Book 1998Latest edition | | 關(guān)鍵詞 | DRAM; Sensor; Wafer; computer; crystal; dielectrics; integrated circuit; interconnect; liquid; microelectrome | | 版次 | 2 | | doi | https://doi.org/10.1007/978-1-4615-5577-3 | | isbn_softcover | 978-1-4613-7551-7 | | isbn_ebook | 978-1-4615-5577-3 | | copyright | Springer Science+Business Media New York 1998 |
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