| 書目名稱 | Point and Extended Defects in Semiconductors |
| 編輯 | G. Benedek,A. Cavallini,W. Schr?ter |
| 視頻video | http://file.papertrans.cn/750/749690/749690.mp4 |
| 叢書名稱 | NATO Science Series B: |
| 圖書封面 |  |
| 描述 | The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an- swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char- acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in- creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo- rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists |
| 出版日期 | Book 1989 |
| 關鍵詞 | Semiconductor; defects; electron microscopy; integrated circuit; material; optical properties; physics; qua |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-1-4684-5709-4 |
| isbn_softcover | 978-1-4684-5711-7 |
| isbn_ebook | 978-1-4684-5709-4Series ISSN 0258-1221 |
| issn_series | 0258-1221 |
| copyright | Springer Science+Business Media New York 1989 |
|Archiver|手機版|小黑屋|
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