Titlebook: Ordering at Surfaces and Interfaces; Proceedings of the T Akio Yoshimori,Teruya Shinjo,Hisatsune Watanabe Conference proceedings 1992 Sprin

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Surface and Interface Structural Analysis by Coaxial Impact Collision Ion Scattering Spectroscopy (C impact-collision ion scattering spectroscopy (CAICISS), which can “see” not only the near-surface one or two atomic layers but subsurface several atomic layers by virtue of its 180 ° experimental scattering angle. In the course of this study, it has been found that an extra compound is formed at th

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Lattice Gas Simulation of the Surface Reconstruction of Si(111) and Ge(111) reconstruction in the former case. Each particle which represents an adatom and its bonding mates on the substratum is assumed to take either of two states, one corresponding to the normal substratum and the other to the stacking faulted one; the dimer formation in the second layer is taken into ac

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Surface Dynamics on Si(001) Studied with a High Temperature Scanning Tunneling Microscopethis instrument, we have observed the evolution of growth induced mosaic step patterns into the equilibrium step distribution at 750 K in real time. We deduce a value of 2.0 eV for the kink detachment energy. In addition, we have for the first time directly observed the migration of atom-like specie

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Angle-Resolved Electron Spectroscopy Study of the Surfaces and Interfaces of Siliconlectron spectroscopy (ARUPS), X-ray photoelectron diffraction (XPD) and micro-probe Auger electron diffraction (.-AED). Electronic structures of a single-domain Si(001)c(4×2) surface are revealed by ARUPS. Arrangements of Cs atoms on the Cs/Si(001) system are studied by XPD and LEED and an arrangeme

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Ordering and Electronic Structure of the Si(001) Surfaceriments by Enta et al. Electronic states are calculated by the LCAO model which simulates a recent pseudopotential calculation. At the low temperature phase of c(4×2) structure, the observed intensity of the spectra can be explained when both the height of and distance between the dimers are modulat

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Aspects of Core-Level Photoemission from Semiconductor Surfaces: Resonant Emission and Final State I.- and ..-resonances is discussed with emphasis on the difference from that in optical absorption. On Si(100), the effect of final state screening is shown to lead to a possibility of interpreting the observed data of 2. core emission in terms of the buckled dimer model.

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Mechanism of Reconstruction of Si(100) Surfaces to be the most stable structure. The mechanism of the stabilization for this surface is different from the electrostatic dipole-dipole interaction of the asymmetric dimers. The dispersion of the surface band compares fairly well with the ARUPS observation. The theoretical simulations of STM image f