Titlebook: Optimisation of ZnO Thin Films; Implants, Properties Saurabh Nagar,Subhananda Chakrabarti Book 2017 Springer Nature Singapore Pte Ltd. 2017

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Summary and Future Works,The summary of the work and future work has been discussed in this chapter.

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978-981-10-9257-2Springer Nature Singapore Pte Ltd. 2017

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Introduction,odes (LDs) and light-emitting diodes (LEDs) in the ultraviolet region because of its wide bandgap (3.437?eV at 2?K) and a large excitonic binding energy of 60?meV at room temperature. However, because of intrinsic defects such as oxygen vacancies and zinc interstitials, ZnO is intrinsically deposite

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Optimisation of PLD Parameters,ntrinsic n-type nature of the deposited ZnO films. Hence, for successful conversion of its carriers from n-type to p-type, it is desirable that the deposited ZnO film has as low an electron concentration as possible. Moreover, for the fabrication of optoelectronic devices, the films should have very

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Fabrication of Optoelectronics Devices,tion diode was fabricated by depositing p-type ZnO films over low resistivity n-Si substrates. The p-type ZnO was achieved by phosphorus as well as nitrogen implantation. The current–voltage characteristics of the fabricated p–n heterojunction diode showed a clear rectifying behaviour with a thresho

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