Titlebook: Optical Properties of Semiconductors; G. Martinez Book 1993 Springer Science+Business Media B.V. 1993 Semiconductor.magnetic field.optical

疲勞

M.-C. Amannto existing and proposed systems. Depending on propagation conditions and the number of antennas in the array, between 2 and 64 times as many users can be accommodated as in existing and proposed systems. In this scheme, an antenna array at the base station is very rapidly adapted to separate spectr

fatty-acids

r cellular system layout and planning and to evaluate tradeoffs in system design issues. In this paper, we begin with a study of handoff rates in evolving cellular systems. Using simple geometry, we show that in macrocells with homogeneous traffic the handoff rate per call increases only as the squa

Exposure

新星

High Resolution Photoemission,e reader with the concepts introduced by this experimental technique and to show, with the help of some selected results, the power of the method for the study of bulk and surface electronic properties of semiconductors and metal-semiconductor phase transitions.

florid

心胸狹窄

Optical Properties of Strongly Correlated 2D-Electron Systems in Semiconductors,re reviewed. The optical properties of 2D-electrons in GaAs/GaAlAs single heterojunctions in the regime of the Fractional Quantum Hall Effect and of the Wigner crystallization are presented.The recent theoretical results on photoluminescence behavior in these regimes are discussed.

blight

Light Detectors,tors families are described: first, the photocathode which is based on the photoemissive effect and the main use of which being the photomultipliers. Then, within the family of the interband absorption detectors, principally characterized by their quantum efficiency, their detectivity, the signal-to

FANG

Semiconductor Light Sources,iples of heterojunctions in III/V compound semiconductors the operation principles and characteristics of light emitting diodes, superluminescent diodes and laser diodes are presented. The technology of the devices, made in AIGaAs/GaAs and InGaAsP/InP is described and the lateral wave confinement by

scrutiny

沉積物

https://doi.org/10.1007/978-94-015-8075-5Semiconductor; magnetic field; optical properties; quantum wells; semiconductors; superlattice