Titlebook: Optical Properties of Narrow-Gap Low-Dimensional Structures; C. M. Sotomayor Torres,J. C. Portal,R. A. Stradlin Book 1987 Plenum Press, Ne

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Optical Nonlinearities in Low-Dimensional StructuresFabrication of semiconductor microstructures opens up new opportunities in optics. In quantum wells, the resulting particle-in-a-box behaviour leads to new optical properties near the optical absorption edge that are applicable at room temperature in GaAs/GaAlAs and other materials systems.

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BIPED

Magnetic Field Effects on the Electronic States of Narrow-Gap Low-Dimensional Structuresterpretation of all experiments. In heterostructures, the coupling of bands with different character produces a strongly non-parabolic dispersion of the subbands and, when a magnetic field is present, a complicated Landau level pattern. This will be exemplified by results of calculations performed w

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MOCVD-Growth, Characterization and Application of III-V Semiconductor Strained Heterostructuresapor deposition growth technique. Photoluminescence, SIMS and Auger measurements showed the high quality optical and electrical properties of these layers. Buried ridge structure lasers emitting at 1.3 μm have been fabricated from the GaInAsP-InP double heterojunction grown on a GaAs substrate. MESF

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The MBE Growth of InSb-Based Heterojunctions and LDSially important device applications [1,2]. For example, HEMT-type structures based on the CdTe/InSb material combination are theoretically predicted [1] to exhibit an order of magnitude higher electron mobilities than is observed in corresponding GaAs/GaAlAs devices whilst CdTe/InSb quantum-well str

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Optical Properties of HgTe-CdTe Superlatticeses offer a number of potential advantages over alloys of HgTe-CdTe for application in IR detectors and sources.. In the alloy the band gap is controlled by the relative composition of Hg to Cd, while in the superlattice, the band gap is controlled by the thickness of the layers making up the superla

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Strained Layer Superlattices of GaInAs-GaAstaxy (M.B.E.) and Metalorganic Vapor Phase Epitaxy (M.O.V.P.E.) has allowed the growth of numerous strained systems. This development is due to the potential interest of these structures for device applications. Their use broadens the choice of epitaxial materials on a given substrate by removing th

CAJ

Properties of PbTe/Pb1-xSnxTe Superlatticesed region of the electromagnetic spectrum. Either liquid phase epitaxy (LPE), hot-wall epitaxy(HWE) or molecular beam epitaxy (MBE) have been used to grow double hetero junction lasers (Preier, 1979) . Recently, also PbTe/PbSnTe multiquantum well (MQW) lasers for pulsed operation at 6 μm and tempera