Titlebook: Optical Properties of Low Dimensional Silicon Structures; Daniel C. Bensahel,Leigh T. Canham,Stephano Ossici Book 1993 Kluwer Academic Pub

殘廢的火焰

Electronic Charge Trapping Effects in Porous Silicon,ger spectroscopy) and the photoluminescence (PL) of p-Si are measured before and after the electron irradiation. A different behavior is observed on samples with various porosity. High porosity samples show surface charge accumulation during irradiation and PL degradation after treatment, while low

從屬

Mechanical, Optical and Electrical Properties of Porous Silicon Prepared under Clean Conditions,at the asanodised layers are in a compressive state, and that after annealing the stress changes and plastic deformation takes place. The film resistivities are greater than 10.Ω-cm. Photoluminescence stability from LEPOS is demonstrated on the scale of months. Finally, we present our measurements o

definition

invade

AVID

,“White” photoluminescence from electrochemically attacked silicon,pearing “white” to the naked eye. Spectroscopy of such samples reveals the presence of a distinct blue luminescence band. The spectral characteristics of the blue band are described and its nature discussed.

劇本

scoliosis

correspondent

健壯

Studies of Porous Silicon by Electron Microscopy,osity, potential applications have evolved first in the Si-on-insulator area and, most recently, based upon its important luminescence properties. However, progress in understanding the behaviour of porous Si has been dependent to a substantial degree upon determination of its structural characteris

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