Titlebook: Noise in Nanoscale Semiconductor Devices; Tibor Grasser Book 2020 Springer Nature Switzerland AG 2020 Random Telegraph Signals in Semicond

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Principles and Applications of ,-RTN in Nano-scaled MOSFET,e conventional soft breakdown and hard breakdown. And, a new one-time-programming (OTP) memory based on this dielectric-fuse breakdown has been demonstrated on a 28-nm high-k metal gate CMOS platform.

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https://doi.org/10.1007/978-3-030-37500-3Random Telegraph Signals in Semiconductor Devices; Low-Frequency Noise in Advanced MOS Devices; Noise

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Tibor GrasserDescribes the state-of-the-art, regarding noise in nanometer semiconductor devices.Enables readers to design more reliable semiconductor devices.Offers the most up-to-date information on point defects

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Origins of 1/, Noise in Electronic Materials and Devices: A Historical Perspective,devices is caused primarily by defects and impurities. The 1/. noise of semiconductor devices was considered to be a surface effect, ascribed by McWhorter to fluctuations in carrier number caused by surface charge trapping. After much controversy, the noise of metal films was shown to be due to mobi

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Noise and Fluctuations in Fully Depleted Silicon-on-Insulator MOSFETs,ing of Fully Depleted Silicon-on-Insulator (FDSOI) MOSFETs, as well as the development of circuit noise simulation methods. Before doing so, we make a brief introduction (Sect. .) on the importance of LFN characterization and modeling, especially in sub-μm multi-interface devices such as the FDSOI M

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