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Titlebook: New Developments in Semiconductor Physics; Proceedings of the I Ferenc Beleznay,Gy?rgy Ferenczi,János Giber Conference proceedings 1980 Spr

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發(fā)表于 2025-3-21 16:34:19 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱New Developments in Semiconductor Physics
副標題Proceedings of the I
編輯Ferenc Beleznay,Gy?rgy Ferenczi,János Giber
視頻videohttp://file.papertrans.cn/666/665038/665038.mp4
叢書名稱Lecture Notes in Physics
圖書封面Titlebook: New Developments in Semiconductor Physics; Proceedings of the I Ferenc Beleznay,Gy?rgy Ferenczi,János Giber Conference proceedings 1980 Spr
出版日期Conference proceedings 1980
關(guān)鍵詞Hall effect; circuit; integrated circuit; physics; semiconductor
版次1
doihttps://doi.org/10.1007/3-540-09988-3
isbn_softcover978-3-540-09988-8
isbn_ebook978-3-540-39271-2Series ISSN 0075-8450 Series E-ISSN 1616-6361
issn_series 0075-8450
copyrightSpringer-Verlag Berlin Heidelberg 1980
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沙發(fā)
發(fā)表于 2025-3-21 23:21:53 | 只看該作者
Stress dependence of quantum limit hall effect and transverse magnetoresistance in n-InSb,increased by an uniaxial stress of some kbar. While the zero-stress results were described by a quantum transport theory including the effect of the nonparabolicity of the conduction band on ionized impurity scattering consistently, this theory fails to reproduce the stress dependence of the conductivity tensor.
板凳
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地板
發(fā)表于 2025-3-22 07:59:51 | 只看該作者
Optically detected magnetic resonance studies of semiconductors,ported and details of deep acceptor centres associated with vacancies in II–VI compounds are given. A recent investigation of oxygen in GaP confirms the existence of the two electron trap and studies of amorphous silicon show that the ODMR technique can be used to study deep centres in both crystalline and amorphous semiconductors.
5#
發(fā)表于 2025-3-22 10:53:52 | 只看該作者
Analysis of defect states by transient capacitance methods in proton bombarded gallium arsenide at σ. = 9.10. cm.) which anneals between 200 K and 300 K. We have also applied the new method DLOS (Deep Level Optical Spectroscopy) to the determination of the optical capture cross-section σ .(hη) of E. to determine the lattice relaxation effect of this centre.
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發(fā)表于 2025-3-23 05:11:41 | 只看該作者
B. C. Cavenett die beobachtete Merkmalsvarianz zwischen den Individuen weitgehend auf Differenzen beruht, die genetischer Natur sind, kann durch Züchtung diese Varianz ausgenützt werden, das hei?t, wird es m?glich, auf Grund bestimmter Züchtungsverfahren mehrheitlich diejenigen Individuen zur Zucht auszuw?hlen, d
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發(fā)表于 2025-3-23 09:05:20 | 只看該作者
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