Titlebook: Neutron Transmutation Doping of Semiconductor Materials; Robert D. Larrabee Book 1984 Plenum Press, New York 1984 Europe.Germanium.Thyrist

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Neutron Transmutation Doping of p-Type Czochralski-Grown Gallium Arsenidetechniques and found to contain three different acceptor levels with a total acceptor concentration of 4 to 6xlO./cm. and total initial compensating donor concentration of 1 to 2xl0./cm...By following individual irradiated samples through a series of heat treatments, we have studied the effects of r

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Neutron Transmutation Doped Silicon for Power Semiconductor Devicesed out will be described. These experiments were crucial to allaying initial concerns regarding the quality of neutron transmutation doped silicon and were instrumental in achieving the present widespread use of this process for fabrication of starting material for the power-device industry..The yea

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Book 1984e Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four paper

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Neutron Transmutation Doping of Semiconductor Materials978-1-4613-2695-3

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