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Titlebook: Neutron Transmutation Doping in Semiconductors; Jon M. Meese Book 1979 Plenum Press, New York 1979 Potential.circuit.computer.energy.indus

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11#
發(fā)表于 2025-3-23 12:45:27 | 只看該作者
Neutron Doping of Silicon in the Harwell Research Reactors applied for Quality Assurance and Control are described..Measurements of decay rates of induced radioactivity and the system of clearance and certification such as to allow the silicon to be internationally transported as “Exempt Material,” as defined in IAEA Regulations, are dealt with..Plans are
12#
發(fā)表于 2025-3-23 14:47:46 | 只看該作者
13#
發(fā)表于 2025-3-23 21:00:13 | 只看該作者
An Automated Irradiation Facility for Neutron Doping of Large Silicon Ingots long, 87 mm in diameter; the future extension of the diameter to 112 mm is feasible; the thermal neutron flux is equal to 2.7xl0.n cm.s. with a thermal to fast (> 100 keV) neutron flux ratio equal to about 400. The irradiation position in the channel is optimized by displacement during the reactor
14#
發(fā)表于 2025-3-23 22:42:06 | 只看該作者
High Precision Irradiation Techniques for NTD Silicon at the University of Missouri Research Reactors are used to obtain radial uniformity of better than ± \% up to 86 mm diameter. Present irradiation positions consist of two 750 mm long x 85 mm diameter, two 750 mm long x 60 mm diameter, seven 750 mm long x 80 mm diameter, and a high precision variable flux facility. The present MURR capacity is
15#
發(fā)表于 2025-3-24 03:14:55 | 只看該作者
Atomic Displacement Effects in Neutron Transmutation Doping is needed to more fully characterize and identify residual lattice imperfections which remain in irradiated silicon after annealing to temperatures > 500°C, and to understand the interaction processes in their formation. Although the concentrations of residual defects are relatively low, these resi
16#
發(fā)表于 2025-3-24 08:02:39 | 只看該作者
17#
發(fā)表于 2025-3-24 13:59:28 | 只看該作者
18#
發(fā)表于 2025-3-24 17:46:21 | 只看該作者
19#
發(fā)表于 2025-3-24 20:21:44 | 只看該作者
Roger W. Phillipssten- und Zeitaufwand wieder revidieren l?sst. Jeder Standort weist eine Vielzahl spezifischer positiver und negativer Standortfaktoren auf, die in ihrer Gesamtheit einem erfolgreichen Gesch?ftsmodell zu- oder abtr?glich sein k?nnen. Zuweilen entscheiden am ausgew?hlten Standort nur wenige Meter dar
20#
發(fā)表于 2025-3-25 02:34:14 | 只看該作者
J. M. Meese,Paul J. Glairontlich geführter Diskussionen und massiver Proteste. Aktiven Widerstand gegen derartige Objekte leisten insbesondere die in unmittelbarer Nachbarschaft zu den potentiellen Standorten lebenden Personen. Eine Standortplanung für die als Locally Unwanted Land Uses (LULUs) bezeichneten Einrichtungen darf
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