Titlebook: Narrow Gap Semiconductors 2007; Proceedings of the 1 Ben Murdin,Steve Clowes Conference proceedings 20081st edition Springer Science+Busine

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Photogalvanic Effects in HgTe Quantum WellsWe report on the observation of the terahertz radiation induced circular (CPGE) and linear (LPGE) photogalvanic effects in HgTe quantum wells. The current response is well described by the phenomenological theory of CPGE and LPGE.

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Dependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In,Mn)As/GaSbam epitaxy. Dependencies of (In,Mn)As and GaSb layer thicknesses on electrical conduction in the (In,Mn)As/GaSb were studied experimentally to discuss the evidence of hole transfer from .-(In,Mn)As to adjacent GaSb.

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Measurement of the Dresselhaus and Rashba Spin-Orbit Coupling Via Weak Anti-Localization in InSb Quahat for both types of structures, the magnetic field corresponding to the conductance minimum is in good agreement with the dominant spin-orbit term, which is the cubic Dresselhaus and Rashba terms for symmetric and asymmetric samples, respectively.

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https://doi.org/10.1007/978-1-4020-8425-6Doping; Exciton; Magnetic field; Raman spectroscopy; Semiconductor; crystal; electronics; liquid; modeling; o