Titlebook: Nanostructures; Theory and Modeling Christophe Delerue,Michel Lannoo Book 2004 Springer-Verlag Berlin Heidelberg 2004 Molecular electronics

鋸齒狀

Quantum Confined Systems,e conduction and valence bands. In semiconductor nanostructures, when the electrons are confined in small regions of space in the range of a few tens of nanometers or below, the energy spectrum is profoundly affected by the confinement, with in particular:

Decline

Dielectric Properties,iconductors with metals, insulators and molecules in a small region of space. The behavior of these systems strongly depends on the complex repartition of the electric field. Many interesting problems are related to dielectric properties: the current—voltage characteristics of a device, the binding

BAIT

BOOM

Optical Properties and Radiative Processes, probabilities taking into account specific problems related to the small size of the systems. In a second part, we consider the electron—phonon coupling using macroscopic or microscopic formulations and we analyze its consequences on the optical line-shape. The last two sections are devoted to the

控制

Defects and Impurities,om quantum wells to quantum dots. In the first two parts, we present the general trends for hydrogenic and deep defects. In the next sections, we consider particular situations: dangling bonds, self-trapped excitons and oxygen related defects at the Si-SiO. interface.

Picks-Disease

藕床生厭倦

Transport,ometer scale. Metal-Oxyde-Semiconductor transistors with channel lengths as small as 10 nm are now being actively studied both theoretically and experimentally [464]. Remarkable experiments have been performed to measure the current . through single-quantum systems, such as molecules [465–472] or se

運(yùn)氣

Restenosis

Transport,atures arising from the quantum states of the system and from Coulombic effects (see Chap. 4). Peaks in the conductance d./d. characteristics are attributed to resonant tunneling through discrete levels. Also, semiconductor nanocrystals can be assembled to form artificial materials with interesting transport properties [479–481].

貪婪地吃

Optical Properties and Radiative Processes,ing using macroscopic or microscopic formulations and we analyze its consequences on the optical line-shape. The last two sections are devoted to the description of the optical properties in nanostructures of semiconductors with direct or indirect bandgap.