Titlebook: Nanoscaled Semiconductor-on-Insulator Structures and Devices; Steve Hall,Alexei N. Nazarov,Vladimir S. Lysenko Conference proceedings 2007

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Suspended Silicon-On-Insulator Nanowires for the Fabrication of Quadruple Gate MOSFETsformance of classical MOSFET structure is becoming seriously degraded. The limits of silicon scaling have been the major challenge for technologists for the past years. With the 90 nm generation in production and despite many roadblocks, the latest International Roadmap for Semiconductors 2005 expec

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Integration of silicon Single-Electron Transistors Operating at Room Temperaturennel of MOS transistors has been advanced, and the dot size is now as small as 2 nm. Consequently, the single-electron transistors operate at room temperature and the peak-to-valley current ratio of the Coulomb blockade oscillations reaches as high as 480 at room temperature. The attempts to integra

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