Titlebook: Nanoscaled Semiconductor-on-Insulator Structures and Devices; Steve Hall,Alexei N. Nazarov,Vladimir S. Lysenko Conference proceedings 2007

occult

Thyroxine

https://doi.org/10.1007/978-1-4020-6380-0Anode; CMOS; FinFET; IC; MOSFET; Nanotube; Potential; Transistor; electronics; heterojunction bipolar transis

不近人情

Keshan-disease

Nanoscaled Semiconductor-on-Insulator Structures and Devices978-1-4020-6380-0Series ISSN 1874-6500 Series E-ISSN 1874-6535

garrulous

MuGFET CMOS Process with Midgap Gate MaterialAn increase in threshold voltage is observed in ultra-thin body MuGFET (multi-gate FET) devices. The threshold increase is due to of lack of carriers at the classical threshold definition. A sufficient amount of carrier build-up requires additional gate voltage (0.12V in our experiment).

Basal-Ganglia

Doping Fluctuation Effects in Multiple-Gate SOI MOSFETsRandom doping fluctuation effects are studied in multiple-gate SOI MOSFETs (MuGFETs) using numerical simulation. The presence of a single doping impurity atom increases threshold voltage. Electrical parameters vary with the physical location of the impurity atom.

intuition

sultry

Non-Planar Devices for Nanoscale CMOStion, non-standard fabrication process modules for triplegate nanoscale MOSFETs and sub-10 nm nanowires are presented. Alternatives to costly extreme ultraviolet (EUV) lithography are proposed as well as a self-aligned nickel silicide module to reduce inherent parasitic access resistances.

抱負(fù)

SiGe Nanodots in Electro-Optical SOI Devicescular-beam growth are the scope of this article. We focus on the fundamental aspects and device applications of the small size dots whose electronic states resemble those of an atom even at room temperature.

NIB

Noise Research of Nanoscaled SOI Devicesownscaling as well as the influence of the additional noise sources appearing in the nanoscaled devices on their noise characteristics are explained. It is shown that the drastic changes in the noise performance of the devices can take place as a result of their nanocsaling.