Titlebook: Nanoliquid Processes for Electronic Devices; Developments of Inor Tatsuya Shimoda Book 2019 Springer Nature Singapore Pte Ltd. 2019 Liquid

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Liquid Silicon Family Materials(2): SiC silicon carbide (a-SiC) films via solution process using a polymeric precursor solution consisting of polydihydrosilane with pendant hexyl groups (PSH). Unlike conventional polymeric precursors, this polymer neither requires catalysts nor oxidation for its synthesis and cross-linkage, resulting in

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Development of Solar Cells Using Liquid Siliconsing an improved LVD method that was introduced in the Sect. . in Chap. .. Two layers were deposited by the improved LVD. The developed solar cell showed a relatively high performance..In Sect. 9.3, liquid silicon was also applied to make heterojunction back contact (HBC) solar cells. The a-Si passi

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Improvement of Solid Through Improved Solutions and Gels (2): The Other Methodson of metal–organic precursors in solution enhanced the processability of the solution in solidification, resulting in a final solid oxide with good properties and a good crystal structure..We observed that hybrid clusters with inorganic cores coordinated by organic ligands were the typical metal–or

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Novel Materials Proper to Liquid Process the resistivity of an ITO film prepared by the vacuum process is typically 1 × 10. Ωcm, whereas it increases to 1 × 10. Ωcm in the case of a film prepared using the liquid process. This degradation is regrettably common in liquid-processed oxide materials and has been a large drawback of the liquid

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Thin-Film Oxide Transistor by Liquid Process (1): FGT (Ferroelectric Gate Thin-Film Transistor)role of a gate electrode, so it should be a conductor. We studied platinum and perovskite LaNiO. (LNO) for this purpose; the former is made by sputtering and the latter can be made using a solution process. A noteworthy result in this chapter is the realization of an .), in which not only the semico