Titlebook: Nanoelectronic Materials and Devices; Select Proceedings o Christophe Labbé,Subhananda Chakrabarti,B. Bindu Conference proceedings 2018 Spr

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A. Lourts Deepak,Mrinal Gandotra,Shailja Yadav,Himani Gandhi,S. Umadevi

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1876-1100 , nanocomposites for energy application, sensing and high strength materials and simulation of novel device design structures for ultra-low power applications.??.978-981-13-5602-5978-981-10-7191-1Series ISSN 1876-1100 Series E-ISSN 1876-1119

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The Effect of Functionalized MWCNT on Mechanical and Electrical Properties of PMMA Nanocomposites,ad, and impact strength were measured, and their improved magnitudes reaffirmed effective dispersion of f-MWCNTs in matrix. Composites replacing the conventional engineering materials in electronic devices should have better electrical conductivity for various applications. Hence, the conductance of

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Films of Reduced Graphene Oxide-Based Metal Oxide Nanoparticles,) and supercapacitors are demonstrated. The higher photodegradation rates provided by the metal oxide-rGO hybrids enable regeneration of the used SERS substrate while the contribution from electric double layer capacitance of rGO and pseudocapacitance due to metal oxide enhances the charge storage i

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Integrated MEMS Capacitive Pressure Sensor with On-Chip CDC for a Wide Operating Temperature Range,o divert the entire stress to the center of the diaphragm. The circuit presented over here uses a sigma–delta technique to convert the input capacitance into digital form. A constant-.. biasing technique is used for high-temperature performance. The entire structure of the sensor is modeled in COMSO

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Weak Cell Detection Techniques for Memristor-Based Memories,s state. Most of the design for testability (DFT) techniques employ the deterministic test patterns algorithm like March tests. Though March tests are very effective for the conventional memories, they are not so effective in case of memristor-based memories. Stability faults such as the undefined s

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Nondestructive Read Circuit for Memristor-Based Memories,the circuit more stable and nondestructive read operation. .: As the proposed circuit reads the content of the memristor memory without disturbing the content of the cell, it avoids refreshing or restoration of the memristor content after each read operation. By that, it improves the speed of the me

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A Modified GDI-Based Low-Power and High Read Stability 8-T SRAM Memory with CNTFET Technology,rformed for the SRAM cell. .: m-GDI technique solves the problem of voltage degradation in GDI technique. An 8-T SRAM cell with low power and high read stability is implemented. CNTs with chirality vector (13, 0) are found to be a good choice for low-power and stable SRAM cell. .: CNTFET with m-GDI-