| 書目名稱 | MOSFET Modeling & BSIM3 User’s Guide | | 編輯 | Yuhua Cheng,Chenming Hu | | 視頻video | http://file.papertrans.cn/640/639489/639489.mp4 | | 圖書封面 |  | | 描述 | Circuit simulation is essential in integrated circuit design,and the accuracy of circuit simulation depends on the accuracy of thetransistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFETModel) has been selected as the first MOSFET model for standardizationby the Compact Model Council, a consortium of leading companies insemiconductor and design tools. .In the next few years, many fabless and integrated semiconductorcompanies are expected to switch from dozens of other MOSFET models toBSIM3. This will require many device engineers and most circuitdesigners to learn the basics of BSIM3. ..MOSFET Modeling & BSIM3 User‘s Guide. explains the detailedphysical effects that are important in modeling MOSFETs, and presentsthe derivations of compact model expressions so that users canunderstand the physical meaning of the model equations and parameters..It is the first book devoted to BSIM3. It treats the BSIM3 model indetail as used in digital, analog and RF circuit design. It covers thecomplete set of models, i.e., I-V model, capacitance model, noisemodel, parasitics model, substrate current model, temperature effectmodel and non quasi-static model. ..MOSFET Modeling & BSIM3 User‘s | | 出版日期 | Book 2002 | | 關(guān)鍵詞 | Leistungsfeldeffekttransistor; Standard; Transistor; field-effect transistor; insulated gate field-effec | | 版次 | 1 | | doi | https://doi.org/10.1007/b117400 | | isbn_softcover | 978-1-4757-8442-8 | | isbn_ebook | 978-0-306-47050-9 | | copyright | Springer Science+Business Media New York 2002 |
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