| 書目名稱 | Modelling of Interface Carrier Transport for Device Simulation | | 編輯 | Dietmar Schroeder | | 視頻video | http://file.papertrans.cn/637/636655/636655.mp4 | | 叢書名稱 | Computational Microelectronics | | 圖書封面 |  | | 描述 | This book represents a comprehensive text devoted to charge transport at semiconductor interfaces and its consideration in device simulation by interface and boundary conditions. It contains a broad review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. Particular emphasis is put on the consistent deriva- tion of interface or boundary conditions for semiconductor device simula- tion. The book is of interest with respect to a wide range of electronic engineering activities, as process design, device design, process character- ization, research in microelectronics, or device simulator development. It is also useful for students and lecturers in courses of electronic engineering, and it supplements the library of technically oriented solid-state physicists. The deepest roots of this book date back to the mid-seventies. Being a student of electrical engineering, who was exposed for the first time to the material of semiconductor device electronics, I was puzzled by noticing that much emphasis was put on a thorough introduction and understand- ing of the basic semiconductor equations, while the boundary conditions for these equation | | 出版日期 | Book 1994 | | 關(guān)鍵詞 | Helium-Atom-Streuung; metal; semiconductor; semiconductor devices; simulation; surface; transport | | 版次 | 1 | | doi | https://doi.org/10.1007/978-3-7091-6644-4 | | isbn_softcover | 978-3-7091-7368-8 | | isbn_ebook | 978-3-7091-6644-4Series ISSN 0179-0307 | | issn_series | 0179-0307 | | copyright | Springer-Verlag/Wien 1994 |
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