Titlebook: Microelectronics, Circuits and Systems; Select Proceedings o Abhijit Biswas,Raghvendra Saxena,Debashis De Conference proceedings 2021 The E

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Interface Trap Charge Analysis of Junctionless Triple Metal Gate High-k Gate All Around Nanowire FET ., . and . for positive, neutral, and negative interface trap charges, respectively. Finally, we have found that a negative ITC has a positive impact on our proposed biotin biosensor device performance than the positive ITCs, proving its efficacy for the detection of cardiovascular diseases in biom

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Radiation Tolerant Memory Cell for Aerospace Applicationsd to other comparison cells. Furthermore, the effect of supply voltage variation has also been studied by calculating and comparing all the parameters at different supply voltages. Monte Carlo simulations are also used for some of the parameters to evaluate the effects of process, voltage, and tempe

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A Highly Reliable and Radiation-Hardened Majority PFET-Based 10T SRAM Cell NMOS access transistors. In the case of hold operation, both the Quatro and proposed cells are able to recover from?1?→?0 single event transients (SETs). For 0?→?1 single event transients (SETs) in hold operation, the proposed cell shows an increment of 3 μA in the current margin. This improves the

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