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Titlebook: Microelectronic Materials and Processes; R. A. Levy Book 1989 Kluwer Academic Publishers 1989 Metall.X-Ray.alloy.crystal.semiconductors

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發(fā)表于 2025-3-21 16:52:33 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書(shū)目名稱Microelectronic Materials and Processes
編輯R. A. Levy
視頻videohttp://file.papertrans.cn/634/633203/633203.mp4
叢書(shū)名稱NATO Science Series E:
圖書(shū)封面Titlebook: Microelectronic Materials and Processes;  R. A. Levy Book 1989 Kluwer Academic Publishers 1989 Metall.X-Ray.alloy.crystal.semiconductors
描述The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and
出版日期Book 1989
關(guān)鍵詞Metall; X-Ray; alloy; crystal; semiconductors
版次1
doihttps://doi.org/10.1007/978-94-009-0917-5
isbn_softcover978-0-7923-0154-7
isbn_ebook978-94-009-0917-5Series ISSN 0168-132X
issn_series 0168-132X
copyrightKluwer Academic Publishers 1989
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978-0-7923-0154-7Kluwer Academic Publishers 1989
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Microelectronic Materials and Processes978-94-009-0917-5Series ISSN 0168-132X
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NATO Science Series E:http://image.papertrans.cn/m/image/633203.jpg
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Silicon Oxidation,Today’s VLSI technology is to a large extent based on the excellent properties of thermally grown silicon dioxide layers. SiO. is used as gate dielectric in MOS devices, as implantation or doping mask, and for device isolation purposes.
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Diffusion in Semiconductors,Atomic diffusion processes in semiconductors play an important role in the fabrication of electronic devices in various areas. These areas include:
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