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Titlebook: Micro and Nanoelectronics Devices, Circuits and Systems; Select Proceedings o Trupti Ranjan Lenka,Durgamadhab Misra,Arindam Bisw Book 2022

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發(fā)表于 2025-3-21 16:30:16 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書(shū)目名稱(chēng)Micro and Nanoelectronics Devices, Circuits and Systems
副標(biāo)題Select Proceedings o
編輯Trupti Ranjan Lenka,Durgamadhab Misra,Arindam Bisw
視頻videohttp://file.papertrans.cn/633/632734/632734.mp4
概述Presents state-of-the-art research and developments in micro and nanoelectronics devices, circuits, and systems.Useful for academic researchers and practitioners in the industry.Discusses the proceedi
叢書(shū)名稱(chēng)Lecture Notes in Electrical Engineering
圖書(shū)封面Titlebook: Micro and Nanoelectronics Devices, Circuits and Systems; Select Proceedings o Trupti Ranjan Lenka,Durgamadhab Misra,Arindam Bisw Book 2022
描述.The book presents select proceedings of the International Conference on Micro and Nanoelectronics Devices, Circuits and Systems (MNDCS-2021). The volume includes cutting-edge research papers in the emerging fields of micro and nanoelectronics devices, circuits, and systems from experts working in these fields over the last decade. The book is a unique collection of chapters from different areas with a common theme and will be immensely useful to academic researchers and practitioners in the industry who work in this field..
出版日期Book 2022
關(guān)鍵詞Microelectronics; Nanoelectronics; Microsystem; Nanosystems; MEMS; NEMS; Nanomaterials; Semiconductor Devic
版次1
doihttps://doi.org/10.1007/978-981-16-3767-4
isbn_softcover978-981-16-3769-8
isbn_ebook978-981-16-3767-4Series ISSN 1876-1100 Series E-ISSN 1876-1119
issn_series 1876-1100
copyrightThe Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Singapor
The information of publication is updating

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V. Hemaja,Deepak Kumar Panda script based on the schemas of both the existing and the desired system, under the condition of zero downtime. The proposed solution was validated by a prototype demonstrating its efficacy. Notably, the approach is technology-independent, articulating systems in terms of invariants, thereby ensurin
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Performance-Based Comparative Study on Single- and Dual-Gate OTFT: Modeling and Simulation Using TCkness of active layer from 60?nm to 20?nm (under the same step size) leads to an enhancement in the on/off current ratio by 99% with the subsequent reduction in leakage current. Decreasing the dielectric thickness from 10?nm to 2?nm (with a step size of 2) leads to an enhancement in these performanc
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,Investigating the Effect of Various Bragg’s Reflector Configurations on the Performance of Flexiblemove spurious harmonic modes odd number of Bragg’s reflector configuration stages are required. The present work also states that W/SiO.-based Bragg’s reflector configurations are best suited to achieve enhanced performance in terms of enhanced coupling coefficient and figure of merit. This investig
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Predictive Analysis of Step-Quantum Well Active Region for Quantum Cascade Detectors,investigated. It is observed that SQW ARs provide higher escape probability by reducing non-radiative scattering rates of photoexcited carriers back into the active well; therefore, improved responsivity performance can be achieved. The escape probability has been analyzed for different operating te
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Analyzing the Effect of Various Reducing Agents and Their Concentrations on Gas Sensing Performancei.e., ammonia-treated rGO aerogel and thio urea-treated rGO aerogel (300?mg), show good gas sensing response toward 100?ppm concentration of ammonia gas (1.4% and 1.21%, respectively) at room temperature, while remaining three samples’ gas sensing responses were very poor (0.102%, 0.205%, and 0.640%
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