Titlebook: Metallization and Metal-Semiconductor Interfaces; Inder P. Batra Book 1989 Plenum Press, New York 1989 Doping.Metall.Semiconductor.Tunnel

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978-1-4612-8086-6Plenum Press, New York 1989

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Metallization and Metal-Semiconductor Interfaces978-1-4613-0795-2Series ISSN 0258-1221

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Disruption, Metallization, and Electrical Properties of Metal GaAs and InP Semiconductor Interfacess is because the emphasis has been on discovering a single mechanism which could explain everything. Monch [12] has already suggested the importance of multiple mechanisms, and this approach will be emphasized in this paper.

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The Role of Defects and Metal States at the Metal-Semiconductor Interfaceempty, cation-derived dangling bond states. The consequence of this interaction is the formation of broadened resonances which tail into the semiconductor bandgap. The rehybridization of the dangling bonds with the metallic states at the interface was not considered. In general the MIGS models encou

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