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Titlebook: Memristors and Memristive Systems; Ronald Tetzlaff Book 2014 Springer Science+Business Media New York 2014 EmergingMemory.HP Memristors.Me

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41#
發(fā)表于 2025-3-28 18:00:08 | 只看該作者
42#
發(fā)表于 2025-3-28 20:42:48 | 只看該作者
43#
發(fā)表于 2025-3-29 02:41:39 | 只看該作者
Application of the Volterra Series Paradigm to Memristive Systemsnique systems. After a brief pedagogical review of the Volterra series theory, this paper introduces a systematic technique enabling the accurate reproduction of the dynamical behavior of classes of memristor circuits.
44#
發(fā)表于 2025-3-29 06:17:50 | 只看該作者
Memristive Devices: Switching Effects, Modeling, and Applicationsand processer units, become less and less efficient when large amount of data have to be moved around and processed quickly. Alternative approaches such as bio-inspired neuromorphic circuits, with distributed computing and localized storage in networks, become attractive options [2–6].
45#
發(fā)表于 2025-3-29 09:39:28 | 只看該作者
Redox-Based Memristive Devicesegration capability with the current CMOS process. In this chapter, we will describe the current understanding of the physical mechanism of redox-based resistive switching and address several technological aspects of metal-oxide ReRAMs.
46#
發(fā)表于 2025-3-29 14:51:08 | 只看該作者
47#
發(fā)表于 2025-3-29 17:04:26 | 只看該作者
48#
發(fā)表于 2025-3-29 20:36:39 | 只看該作者
Memristor Device Engineering and CMOS Integration for Reconfigurable Logic Applicationses including fabrication techniques, choice of materials, and geometry engineering are then reviewed. Finally, hybrid memristor/CMOS circuits that integrate CMOS with memristive devices as reconfigurable switches are presented.
49#
發(fā)表于 2025-3-30 02:58:29 | 只看該作者
Book 2014 for recent applications of memristors for resistive random access memories, neuromorphic systems and hybrid CMOS/memristor circuits. Methods for the simulation of memristors are demonstrated and an introduction to neuromorphic modeling is provided.
50#
發(fā)表于 2025-3-30 07:06:28 | 只看該作者
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