Titlebook: Mathematical and Numerical Modelling of Heterostructure Semiconductor Devices: From Theory to Progra; E.A.B. Cole Textbook 2009 Springer-V

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Basic approximation and numerical methods this book. The contents of this chapter will be concerned with only some of the techniques which will be found most useful in applications to device modelling. Later, some sections of programme code written in the C programming language (with a small subset of C++) are given to illustrate the theor

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Solution of equations: the Newton and reduced methodion by a derivative, but in the case of more than one variable the method requires the inversion of the Jacobian matrix, and this can be very time consuming. An introduction will be given to the Newton method. It will be shown that the direct Newton method is equivalent to iterating a set of equatio

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Solution of equations: the phaseplane methodthe form of re-writing of code, for the resulting numerical solutions. Extra variables are defined to enable the system of second order differential equations to be written as a system of first order equations, and the enlarged system is iterated in the phase plane which is spanned by this enlarged

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Approximate and numerical solutions of?the?Schr?dinger equationon. In this case, it is not possible to calculate the exact eigensolutions of the Schr?dinger equation. Even when the potential is specified as a functional form, it is possible to solve the Schr?dinger equation only for a very limited number of artificial potentials. Many analytical and numerical a

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Grid generation the particular features of, in particular, the MESFET and the HEMT. An initial grid is assigned to the basic structure of the device by taking into account the positions of the corners of contacts, recesses, and layer structure. This is achieved with the use of structures in C++. It is shown how ex