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Titlebook: Materials for Tomorrow; Theory, Experiments Sibylle Gemming,Michael Schreiber,Jens-Boie Suck Book 2007 Springer-Verlag Berlin Heidelberg 2

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發(fā)表于 2025-3-25 07:07:12 | 只看該作者
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發(fā)表于 2025-3-25 14:45:05 | 只看該作者
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發(fā)表于 2025-3-25 18:48:47 | 只看該作者
Sibylle Gemming,Michael Schreiberultiprocessors. In particular, Golab and Hendler’s algorithm relies on hardware support for both Fetch-And-Store-And-Store (FASAS) and Double-Word Compare-And-Swap (DCAS), while our algorithm relies only on FASAS. (If . and . are shared variables and . is a value, FASAS(.,?.,?.) writes .’s value in
25#
發(fā)表于 2025-3-25 20:22:25 | 只看該作者
Alex Trellakis,Peter Voglt to the number of object replicas in the system and the number of replica failures, and also showed that no two-exchange implementations of multiple-writer/multiple-reader (MWMR) objects are possible. Later research focused on providing implementations that remove the constraint on the number of re
26#
發(fā)表于 2025-3-26 03:24:28 | 只看該作者
Jens-Boie Suckt to the number of object replicas in the system and the number of replica failures, and also showed that no two-exchange implementations of multiple-writer/multiple-reader (MWMR) objects are possible. Later research focused on providing implementations that remove the constraint on the number of re
27#
發(fā)表于 2025-3-26 08:17:02 | 只看該作者
28#
發(fā)表于 2025-3-26 09:45:47 | 只看該作者
Computer Simulations of Undercooled Fluids and Glasses,ials is discussed..When one studies undercooled fluids and glasses, a second problem enters, the disparity between experimental cooling rates and the much larger rates of the simulation. The extent to which a meaningful comparison to experiments is nevertheless possible is discussed. It is shown tha
29#
發(fā)表于 2025-3-26 15:21:11 | 只看該作者
Theoretical Investigation of Interfaces,ties. We introduce the basic concepts of interface symmetry, structure and analysis with a strong focus on the theoretical methods and give an overview of currently available techniques for the modeling and simulation of the interface properties at an atomic-scale level. Two fundamentally different
30#
發(fā)表于 2025-3-26 17:49:24 | 只看該作者
Electronic Structure and Transport for Nanoscale Device Simulation, carrier transport in semiconductors. We then extend the drift-diffusion model to take quantum corrections for size quantization into account, and we outline the principles of ballistic quantum transport. Finally, we present . ., a software package for the simulation of nanostructures that has been
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