Titlebook: Materials for Refractories and Ceramics; A Study of Patents a Marten Terpstra Book 1986 ECSC, EEC, EAEC, Brussels and Luxembourg 1986 ceram

obesity

書目名稱Materials for Refractories and Ceramics影響因子(影響力)




書目名稱Materials for Refractories and Ceramics影響因子(影響力)學科排名




書目名稱Materials for Refractories and Ceramics網(wǎng)絡公開度




書目名稱Materials for Refractories and Ceramics網(wǎng)絡公開度學科排名




書目名稱Materials for Refractories and Ceramics被引頻次




書目名稱Materials for Refractories and Ceramics被引頻次學科排名




書目名稱Materials for Refractories and Ceramics年度引用




書目名稱Materials for Refractories and Ceramics年度引用學科排名




書目名稱Materials for Refractories and Ceramics讀者反饋




書目名稱Materials for Refractories and Ceramics讀者反饋學科排名

emission

Aluminium-Based Materialsermal treatment in an autoclave at a temperature between 160 and 25°C and under a pressure between 5 and 50 AT for a period between 20 minutes and 4 hours. During hydrothermal treatment aluminium trihydroxide is converted into aluminium oxyhydroxide, containing 0.01–25%. Cr.O. and/or Fe.O..

CUB

mitral-valve

Debrief

Ceramic and hard materials, intermediates, based on aluminium and aluminium oxides, containing 0.5 to 15 w.% N.O., followed by granulation of the compacted material and heat treatment of the granules obtained. From this material various products can be made like balls, cylinders, small plates, etc.

大笑

特別容易碎

條約

弓箭

Aluminium-Based Materialsspension of aluminium trihydroxide, the suspension also containing soluble chrome and/or iron components. This suspension is then exposed to a hydrothermal treatment in an autoclave at a temperature between 160 and 25°C and under a pressure between 5 and 50 AT for a period between 20 minutes and 4 h

時代錯誤

Materials Predominantly Based on Boronter than 1 or 1 and x = z, but not equal with y. The hard material is obtained by exposing boron, nitrogen and carbon containing materials to conditions, permitting the formation of the hard material, for example under a pressure of min. 50 kbar and a temperature between 1300 and 2000°C.