Titlebook: Materials and Reliability Handbook for Semiconductor Optical and Electron Devices; Osamu Ueda,Stephen J. Pearton Book 2013 Springer Scienc

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Reliability and Degradation of Vertical-Cavity Surface-Emitting Laserser-optic data communications equipment and a large fraction of optical mice made today. The lasers have been shipped with a field failure rate of <10 ppm/year over the past decade, thanks to extensive precautions that have been taken to qualify the designs and to screen out weak devices and weak bat

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InGaN Laser Diode Degradationies, there is still no clear picture of physical mechanisms lying behind these aging processes. First of all, in contrast to GaAs counterparts, the nitride laser degradation seems to be independent from extended defects movement and multiplication, is uniform across the device surface, and is rather

現(xiàn)代

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Mechanism of Defect Reactions in Semiconductorsstarting with the origin of the electron-lattice interactions. The key mechanism of extrinsic self-trapping is introduced to understand strong carrier localization and large accompanied lattice distortion. Symmetry-breaking structural instability is explained in connection with the Jahn-Teller effec

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Strain Effects in AlGaN/GaN HEMTsess on performance and reliability can lead to improvements in device design. Mechanical wafer bending is a cost-effective method to investigate the effects of stress on semiconductor devices which has been extensively used to isolate and study the effect of stress in strain-engineered Si MOSFETs. I

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FILTH

Novel Dielectrics for GaN Device Passivation and Improved Reliability very critical to reduce the inter-device isolation leakage currents in mesa-isolated AlGaN/GaN high electron mobility transistors and to improve reliability. Three different passivation layers (SiN., MgO, and Sc.O.) were examined for their effectiveness in mitigating surface state-induced current c