Titlebook: Materials Modification by High-fluence Ion Beams; Roger Kelly,M. Fernanda Silva Book 1989 Kluwer Academic Publishers 1989 AES.EELS.Helium-

僵硬

Magnetron Sputtering - Physics and Designing effect and minimal damage caused to delicate substrates, the ability to cope with almost any metal or alloy, and indeed many insulating materials when reactive or radio frequency (R.F.) sputtering are used, the high rate of coating compared to ordinary diode sputtering, the versatility and adapt

拾落穗

On the Formation and Characterization of Microcrystalline Si:H Prepared by RF Magnetron Sputteringions such as contact interlayers in solar cells .. preparation of thin films of μc-Si can be achieved via chemical transport in a hydrogen plasma . deposition from a glow-dischacge (GD) of silane diluted in hydrogen or inert gas at a higher power level .or by reactive-sputtering, . a technique appli

雕鏤

Depth Profiling of Ta2O5 thin Layer on Ta Foil by Ion Scattering Spectrometry and Ion Sputteringplication concerns all fields of Materials Science: microelectronics, thin films technology, catalysis, adhesion, corrosion,… However, from the time dependence of the surface signal, the correct derivation of the true composition profile is not obvious. To achieve this goal the knowledge of the dept

BARGE

Bombardment of Alkali and Alkali-Earth Halides by Ions and Electronsttering of metals under ion bombardment is well understood in terms of a collision cascade emission mechanism [3], for electron bombardment no such process can account for any particle emission due to the negligible momentum transfer. Electronic processes have been proposed to explain electron or ph

翻布尋找

Effects of Ar+ Angle-of-Incidence on the Etching of Si with Cl2 and Low-Energy Ar+ Ions<5 keV) ion beam and a reactive gas beam are directed at a solid surface and the properties of the products leaving the surface are measured. This model system of plasma etching has been studied for various gas-ion-solid combinations.. In some of these systems both spontaneous etching (i.e. by the g

–DOX

Irradiation Effects in Ices by Energetic Ions processes involved, we have performed direct in-situ measurements of the erosion during irradiation, by means of infrared spectrometry of the ices. In this paper, we summarize the main results we obtained, during the irradiation of a number of ices (pure H.O or CH.; mixtures: H.O + CO.; H.O + NH.;

VICT

circumvent

Computer Simulation of Stopping and Sputteringnough, the basic principles of both main categories, i.e. molecular dynamics (MD) and binary collision approximation (BCA) calculations, were established nearly simultaneously. The first BCA simulations actually treated sputtering already /1/, whereas the initial purpose of MD calculations was the d

forager

終止

Bombardment of Alkali and Alkali-Earth Halides by Ions and Electronsl direction. Thus a replacement sequence along the line of halogen ions takes place, and if the sequence reaches the surface, emission of a halogen atom is caused. Therefore the expelled halogen atoms feature directional emission and hyperthermal energies [6]. The replacement sequence and the diffus