Titlebook: MOSFET Models for VLSI Circuit Simulation; Theory and Practice Narain Arora Book 1993 Springer-Verlag/Wien 1993 Regression.SPICE.Signal.VLS

輕而薄

SPICE Diode and MOSFET Models and Their Parameters,e to derive the model equations, as that has already been done at appropriate places in previous chapters. Here we will only describe equations used to model different regions of device operation. Emphasis will be on model parameters required to run SPICE and how to measure them.

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Statistical Modeling and Worst-Case Design Parameters,ally differ from their drawn (intended) dimensions due to several processing effects such as lateral expansion of local oxidation, imperfect etching, mask alignment tolerances, etc. It is observed, for example, in a 2 .m CMOS process, a polysilicon line drawn to be .μm could be any where between 1.3

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Comprise

雪白

Data Acquisition and Model Parameter Measurements,th devices and under different bias conditions. Collecting measured data and processing these data to accurately determine model parameter values is an essential task for the complete characterization of a transistor model for use in the circuit simulator.

供過(guò)于求

Model Parameter Extraction Using Optimization Method, Our intent here is only to provide an introduction to the optimization technique as applied to the device model parameter extraction. Various optimization programs (also called optimizers), which have been reported in the literature for device model parameter extraction, differ mainly in the optimization algorithms used.

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Calibrate

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