Titlebook: Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET; Nabil Shovon Ashraf Book 2018 Springer Nature Switzerland AG 2018

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Introduction,s high-performance Tera Hz microprocessor, systems-on-chip, 3D integration and packaging, RF and analog application-specific integrated circuits, digital signal processing core architecture systems, and other highly evolving yet miniaturized systems, the transistor device size is getting down to alm

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Simulation Results of On-State Drain Current and Subthreshold Drain Current at Substrate Temperatur density, the off-state or idle-state leakage power dissipation in a chip is exceeding more than 10 W/cm. and causing severe thermal management issues of proper heat dissipation and regulation on-chip. Device engineers therefore have focused on reducing leakage power by properly attenuating the subt

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Simulation Results Substrate Mobility and On-Channel Mobility of Conventional Long-Channel ,-MOSFETighlighted the utmost importance of operating today’s ULSI circuits at substrate temperatures considerably below 300 K to rip the benefit of reduced subthreshold drain current impacting substhreshold and off-state leakage current minimization and simultaneously moderately augmenting the on-state dri

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Review of Scaled Device Architectures for Their Feasibility To Low-Temperature Operation Simulationls can be knowledgeable of the efficacy of these simulated plots in terms of detailed understanding of today’s scaled device architectures as batch fabricated in industry, the author draws the reader’s attention to some well-cited and highly acclaimed published journal articles from literature surve

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